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Toshiba�s New Discrete Insulated Gate Bipolar Transistor Boosts Efficiency of Air Conditioners and Industrial Equipment

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KAWASAKI, Japan--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation (�Toshiba�) has launched a 650V discrete insulated gate bipolar transistor (IGBT) �GT30J65MRB� for the power factor correction (PFC) circuits[1] of air conditioners and large power supplies for industrial equipment. Volume shipments start today.


Power semiconductors have won recognition as important devices in energy conservation efforts, including moves toward carbon neutrality. In industrial equipment and home appliances, which consume considerable electricity, demand for highly efficient switching devices is growing due to the increasing use of inverters in air conditioners and the need to lower power consumption in large-scale power supplies for industrial equipment. This has spurred increasing demand for low-loss switching devices and higher switching frequencies in PFC circuits.

Toshiba brings the latest process to its new IGBT. An optimized trench structure secures an industry-leading[2] low switching loss (turn-off switching loss) of 0.35mJ (typ.)[3], approximately 42%[4] lower than in Toshiba�s previous product, GT50JR22. The new IGBT also has a built-in diode with forward voltage of 1.20V (typ.)[5], approximately 43%[5] lower than in GT50JR22. These improvements contribute to increased equipment efficiency.

For PFC circuits of air conditioners, Toshiba�s previous product GT50JR22is used with an operating frequency below 40kHz[6]. GT30J65MRB is Toshiba�s first IGBT for PFC for use below 60kHz[6], achieved by reducing switching loss (turn-off switching loss) to secure higher frequency operation.

Toshiba will continue to expand its product line-up to meet market trends and improve equipment efficiency.

Notes:

[1] Power factor correction (PFC) circuit: A circuit that reduces the phase difference between voltage and current to bring the power factor close to unity, in order to suppress harmonic components generated in switching power supplies.

[2] Toshiba survey, as of March 2023.

[3] Test condition: Inductive load, VCE=400V, IC=15A, VGE=15V, RG=56?, Tc=175�C

[4] As of March 2023, values measured by Toshiba (test condition: VCC=400V, IC=15A, VGG=+15V/0, RG=56?, Tc=175�C).

[5] Test condition: IF=15A, VGE=0V, Tc=25�C

[6] As of March 2023, values measured by Toshiba using its PFC evaluation boards.

Applications

  • Home appliances (air conditioners, etc.)
  • Industrial equipment (factory automation equipment, multi-function printers, etc.)

Features

  • Industry-leading[2] low switching loss (turn-off switching loss): Eoff=0.35mJ[3] (typ.) realized by the latest process
  • Built-in freewheeling diode (FWD) by reverse conducting (RC) structure
  • Fast switching time (fall time): tf=40ns (typ.) (Tc=25�C, IC=15A, RG=56?)
  • Low diode forward voltage: VF=1.20V (typ.) (Tc=25�C, IF=15A, VGE=0V)

Main Specifications

(Ta=25�C, unless otherwise specified)

Part number

GT30J65MRB

Package

TO-3P(N)

Absolute

maximum

ratings

Collector-emitter voltage VCES (V)

650

Collector current (DC) I? (A)

Tc=25�C

60

Tc=100�C

30

Junction temperature Tj (�C)

175

Collector-emitter saturation voltage

VCE(sat) typ. (V)

IC?30A, VGE=15V, Tc=25�C

1.40

Switching time (fall time) tf typ.(ns)

Inductive load,

VCE=400V, IC=15A,

VGE=15V, RG=56?, Tc=25�C

40

Switching loss (turn-off switching loss)

Eoff typ. (mJ)

Inductive load,

VCE=400V, IC=15A,

VGE=15V, RG=56?, Tc=175�C

0.35

Diode forward voltage VF typ. (V)

IF=15A, VGE=0V, Tc=25�C

1.20

Junction-to-case thermal resistance Rth(j-c) max (�C/W)

0.75

Sample Check & Availability

Buy Online

Follow the link below for more on the new product.

GT30J65MRB

Follow the link below for more on Toshiba�s IGBTs.

IGBTs

To check availability of the new product at online distributors, visit:

GT30J65MRB

Buy Online

* Company names, product names, and service names may be trademarks of their respective companies.

* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

About Toshiba Electronic Devices & Storage Corporation

Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.

The company's 23,000 employees around the world share a determination to maximize product value, and promote close collaboration with customers in the co-creation of value and new markets. With annual sales now surpassing 850-billion yen (US$7.5 billion), Toshiba Electronic Devices & Storage Corporation looks forward to building and to contributing to a better future for people everywhere.

Find out more at https://toshiba.semicon-storage.com/ap-en/top.html

Contacts

Customer Inquiries:
Power Device Sales & Marketing Dept.

Tel: +81-44-548-2216

Contact Us

Media Inquiries:
Chiaki Nagasawa

Digital Marketing Department

Toshiba Electronic Devices & Storage Corporation

Mail: [email protected]

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