Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment

KAWASAKI, Japan–(BUSINESS WIRE)–Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the “TRSxxx65H series,” the company’s third and latest^[1] generation of silicon carbide (SiC) Schottky barrier diodes (SBDs) for industrial equipment. Volume shipments of the first 12 products, all 650V, start today, with seven products housed in TO-220-2L packages and five in DFN8×8 packages.

The new products use a new metal in a third generation SiC SBD chip that optimizes the junction barrier Schottky (JBS) structure^[2] of the second generation products. They achieve industry-leading^[3] low forward voltage of 1.2V (Typ.), 17% lower than the 1.45V (Typ.) of the previous generation. They also improve the trade-offs between forward voltage and total capacitive charge, and between forward voltage and reverse current, which reduces power dissipation and contributes to high efficiency of equipment.

Notes:

[1] As of July 2023.

[2] JBS structure lowers the electric field at the Schottky interface and reduces leakage current.

[3] As of July 2023, Toshiba survey.

Applications

• Switching power supplies
• EV charging stations
• Photovoltaic inverters

Features

• Industry-leading^[3] low forward voltage: V_F＝1.2V (Typ.) (I_F=I_F(DC))
• Low reverse current:
  
  TRS6E65H I_R＝1.1μA (Typ.) (V_R=650V)
• Low total capacitive charge:
  
  TRS6E65H Q_C＝17nC (Typ.) (V_R=400V, f=1MHz)

Main Specifications

(Unless otherwise specified, Ta=25°C)
Part number	Package	Absolute maximum ratings					Electrical characteristics				Sample Check & Availability
		Repetitive peak reverse voltage VRRM (V)	Forward DC current IF(DC) (A)		Non-repetitive peak forward surge current IFSM (A)		Forward voltage (pulse measurement) VF (V)	Reverse current (pulse measurement) IR (μA)	Total capacitance Ct (pF)	Total capacitive charge QC (nC)
				Temperature conditions Tc (°C)	f=50Hz (half-sine wave, t=10ms), Tc=25°C	Square wave, t=10μs, Tc=25°C	IF=IF(DC)	VR=650V	VR=400V, f=1MHz
							Typ.	Typ.	Typ.	Typ.
TRS2E65H	TO-220-2L	650	2	164	19	120	1.2	0.2	10	6.5	Buy Online
TRS3E65H			3	161	28	170		0.4	14	9	Buy Online
TRS4E65H			4	158	36	230		0.6	17	12	Buy Online
TRS6E65H			6	153	41	310		1.1	24	17	Buy Online
TRS8E65H			8	149	56	410		1.5	31	22	Buy Online
TRS10E65H			10	148	62	510		2.0	38	27	Buy Online
TRS12E65H			12	148	74	640		2.4	46	33	Buy Online
TRS4V65H	DFN8×8		4	155	28	230		0.6	17	12	Buy Online
TRS6V65H			6	151	41	310		1.1	24	17	Buy Online
TRS8V65H			8	148	45	410		1.5	31	22	Buy Online
TRS10V65H			10	145	54	510		2.0	38	27	Buy Online
TRS12V65H			12	142	60	640		2.4	46	33	Buy Online

Follow the links below for more on the new product.

TRS2E65H
TRS3E65H
TRS4E65H
TRS6E65H
TRS8E65H
TRS10E65H
TRS12E65H
TRS4V65H
TRS6V65H
TRS8V65H
TRS10V65H
TRS12V65H

Follow the link below for more on Toshiba’s SiC Schottky Barrier Diodes.

SiC Schottky Barrier Diodes

To check availability of the new products at online distributors, visit:

TRS2E65H

Buy Online

TRS3E65H

Buy Online

TRS4E65H

Buy Online

TRS6E65H

Buy Online

TRS8E65H

Buy Online

TRS10E65H

Buy Online

TRS12E65H

Buy Online

TRS4V65H

Buy Online

TRS6V65H

Buy Online

TRS8V65H

Buy Online

TRS10V65H

Buy Online

TRS12V65H

Buy Online

* Company names, product names, and service names may be trademarks of their respective companies.

* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

About Toshiba Electronic Devices & Storage Corporation

Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.

The company’s 21,500 employees around the world share a determination to maximize product value, and promote close collaboration with customers in the co-creation of value and new markets. With annual sales approaching 800-billion yen (US$6.1 billion), Toshiba Electronic Devices & Storage Corporation looks forward to building and to contributing to a better future for people everywhere.

Find out more at https://toshiba.semicon-storage.com/ap-en/top.html

Contacts

Customer Inquiries:
Power Device Sales & Marketing Dept.

Tel: +81-44-548-2216

Contact Us

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Chiaki Nagasawa

Digital Marketing Department

Toshiba Electronic Devices & Storage Corporation

semicon-NR-mailbox@ml.toshiba.co.jp