Toshiba Launches Small and Thin Common-Drain MOSFET Featuring Very Low On-Resistance Suitable for Quick Charging Devices

KAWASAKI, Japan–(BUSINESS WIRE)–Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched “SSM14N956L,” a 12V common-drain N-channel MOSFET with a current rating of 20A, for use in battery protection circuits in lithium-ion (Li-ion) battery packs, such as those for mobile devices. Shipments start today.

Li-ion battery packs rely on highly robust protection circuits to reduce heat generation while charging and discharging and to enhance safety. These circuits must feature low power consumption and high-density packaging, requiring MOSFETs that are small and thin and that deliver low On-resistance.

SSM14N956L uses Toshiba’s micro-process, as does the already released SSM10N954L. This ensures both low power loss, due to industry-leading^[1] low On-resistance characteristics, and low standby power, realized by industry-leading^[1] low gate-source leakage current characteristics. These qualities help to extend battery operating hours. The new product also uses a new small, thin package, TCSPED-302701 (2.74mm x 3.0mm, t = 0.085mm (typ.)).

Toshiba will continue to develop MOSFET products for protection circuits in devices powered by lithium-ion battery packs.

Applications

• Consumer electronics and office and personal devices with a lithium-ion battery pack, including smartphones, tablets, power banks, wearable devices, game consoles, electric toothbrushes, compact digital cameras, digital SLR cameras, etc.

Features

• Industry leading^[1] low On-resistance: R_SS(ON)=1.1mΩ (typ.) @V_GS=3.8V
• Industry leading^[1] low gate-source leakage current: I_GSS=±1μA (max) @V_GS=±8V
• Small and thin type TCSPED-302701 package: 2.74mm x 3.0mm, t=0.085mm (typ.)
• Common-drain structure that can be easily used in battery protection circuits

Note:

[1]: Among products with the same ratings. As of May 2023, Toshiba survey.

Main Specifications

(Unless otherwise specified, Ta=25°C)
Part number			SSM14N956L	SSM10N954L[2]
Configuration			N-channel common-drain
Absolute maximum ratings	Source-source voltage VSSS (V)		12
	Gate-source voltage VGSS (V)		±8
	Source current (DC) IS (A)		20.0	13.5
Electrical Characteristics	Gate-source leakage current IGSS max (μA)	@VGS＝ ±8V	±1
	Source-source On-resistance RSS(ON) typ. (mΩ)	@VGS＝4.5V	1.00	2.1
		@VGS＝3.8V	1.10	2.2
		@VGS＝3.1V	1.25	2.4
		@VGS＝2.5V	1.60	3.1
Packages	Name		TCSPED-302701	TCSPAC-153001
	Size typ. (mm)		2.74×3, t=0.085	1.49×2.98, t=0.11
Sample Check & Availability			Buy Online	Buy Online

Note:

[2] Already released product.

Follow the link below for more on the new product.

SSM14N956L

To check availability of the new product at online distributors, visit:

SSM14N956L

Buy Online

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* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

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Toshiba Electronic Devices & Storage Corporation, a leading supplier of advanced semiconductor and storage solutions, draws on over half a century of experience and innovation to offer customers and business partners outstanding discrete semiconductors, system LSIs and HDD products.

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